Some Peculiarities of Photo-structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

Amorphous copper tungsten oxide with tunable band gaps

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Laser-induced polarization-dependent photocrystallization of amorphous chalcogenide films

Irradiation of amorphous a-Se Ag I and a-Se films by linearly polarized He–Neand Arq ion-laser light was shown 70 15 15 to produce polycrystalline films with linear dichroism, the sign of which is determined by the polarization of the light. Photocrystallization of the films was confirmed by direct structural investigations. Thus, a new phenomenon, the effect of light polarization on the photoc...

THE RELAXATION OF PHOTODARKENING IN Sn DOPED AMORPHOUS As2Se3 FILMS

Photodarkening relaxation under light exposure of a-As2Se3 amorphous films doped with 0.5-5.0 at.% Sn was studied for its dependence on the concentration of impurities and thermal treatment. Both factors reduce photodarkening with the degree of reduction dependent on the concentration of impurity. The relaxation process may be described by a stretched exponential with the dispersion parameter 0...

Investigation of Chalcogenide Glassy Semiconductors in the Ben-gurion University (israel)

The study of chalcogenide glassy semiconductors (ChGS) in the Ben-Gurion University (Israel) started in early 1992 and was based on the results obtained in the A. F. Ioffe PhysicoTechnical Institute (St. Petersburg, Russia). Most investigations were performed in the following directions: structural transformations induced by short intense light pulses, photoinduced optical anisotropy, photoindu...

Holographic Recording in Amorphous Chalcogenide Semiconductor Thin Films